KU PA 200270-10 B

KU PA 200270-10 B, GaN-HEMT Leistungsverstärker

Based on GaN HEMT technology, the amplifier module achieves energy efficiencies greater than 40% over the entire 2000-2700MHz bandwidth at 10W output power.
Lead time on request
Frequency range1950..2750 MHz
Maximum input power+30 dBm
Output power P3dB40 dBm (min.) (CW)
10 W (min.) (CW)
Gain (small signal)47.5 dB (typ.)
Gain flatness (small signal)+/-0.5 dB (typ.)
Noise figure @ 18 °C1.5 dB (typ.)
Harmonic rejection 40 dB (typ.)
Over temperature protectionyes
IM3 (2)30 dBc (typ.) @ 40 dBm PEP
Efficiency 40 % (typ.) @ P3dB
Input return loss (S11)13 dB (typ.)
ON voltage+3 ... +50 V DC
Supply voltage+10 ... 50 V DC
Quiescent current160mA (typ.) @ 28V DC
Current consumption3 A (max.) @ 10V DC
Forward detectionyes (log. detector)
Reflected power detectionyes (log. detector)
VSWR of loadinfinite
Operating case temp. range-20 ... +80 °C
Input connector / impedanceSMA-female / 50 ohms
Output connector / impedanceSMA-female / 50 ohms
Casemilled aluminium
Dimensions (mm)85 X 85 X 40
Weight0
Based on GaN HEMT technology, the amplifier module achieves energy efficiencies greater than 40% over the entire 2000-2700MHz bandwidth at 10W output power. The amplifier is temperature compensated and, despite its high gain (47dB), features a very low gain ripple of typically +/- 0.5dB across the full bandwidth.
The high efficiency in combination with an extended operating temperature range of -20 ... + 80°C allows the use of the amplifier module even under suboptimal cooling conditions. An overtemperature shutdown at +80°C (with automatic restart) protects the module from overheating.
The RF output tolerates arbitrary mismatch without causing instability or damage.
In addition to the standard version with + 28V operating voltage (version A), the amplifier module is also available with wide-range supply voltage input (version B, +10 ... + 50V operating voltage).
The module provides low-impedance monitoring outputs for measurement and monitoring of forward and backward power as well as operating temperature. Power supply, control and monitoring signals are provided via a robust I/O interface (9-pin Sub-D connector) with protection against reverse polarity, overvoltage and EMI.
  • High efficiency and bandwidth
  • Very low ripple, noise figure and good harmonic rejection over the entire bandwidth
  • Robust I/O interface via Sub-D connector with monitoring outputs for forward and backward power as well as temperature
  • Extended operating temperature range -20 ... + 80 ° C
  • Available with wide-range supply voltage input +10 ... 50V (version B)
  • Plasma generation and microwave heating in process engineering and scientific applications
  • RF Measurement setups, EMC testing
  • Radar
  • Jammer
  • Analog & Digital Transmission Systems