Based on GaN HEMT technology, the amplifier module achieves energy efficiencies greater than 40% over the entire 2000-2700MHz bandwidth at 10W output power. The amplifier is temperature compensated and, despite its high gain (47dB), features a very low gain ripple of typically +/- 0.5dB across the full bandwidth.
The high efficiency in combination with an extended operating temperature range of -20 ... + 80°C allows the use of the amplifier module even under suboptimal cooling conditions. An overtemperature shutdown at +80°C (with automatic restart) protects the module from overheating.
The RF output tolerates arbitrary mismatch without causing instability or damage.
In addition to the standard version with + 28V operating voltage (version A), the amplifier module is also available with wide-range supply voltage input (version B, +10 ... + 50V operating voltage).
The module provides low-impedance monitoring outputs for measurement and monitoring of forward and backward power as well as operating temperature. Power supply, control and monitoring signals are provided via a robust I/O interface (9-pin Sub-D connector) with protection against reverse polarity, overvoltage and EMI.
High efficiency and bandwidth
Very low ripple, noise figure and good harmonic rejection over the entire bandwidth
Robust I/O interface via Sub-D connector with monitoring outputs for forward and backward power as well as temperature
Extended operating temperature range -20 ... + 80 ° C
Available with wide-range supply voltage input +10 ... 50V (version B)
Plasma generation and microwave heating in process engineering and scientific applications